Diode Current Equation Derivation Nptel
V applied voltage across the terminals. H is the exponential ideality factor.

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In this video i will derive the ideal diode equation which involves deriving the minority carrier concentration as a function of depth into the depletion region.

Diode current equation derivation nptel. The ideal diode law expressed as. This equation is semi empirical it means that its an educated guess based on theory and observation it cant be derived only from theory. I0 dark saturation current the diode leakage current density in the absence of light.
I the net current flowing through the diode. This equation describes diode behavior in the forward and reverse biased region only ie not valid for breakdown. The diode equation gives an expression for the current through a diode as a function of voltage.
Diode current equation expresses the relationship between the current flowing through the diode as a function of the voltage applied across it. In this equation two parameters require to be discussed in quite detail. The drop of the quasi fermi level of holes from the level of the applied voltage at the p terminal to its value at the point where doping is neutral or also called as junction.
T is the absolute temperature in kelvin. Pn junction diode current equation derivation duration. To derive the equation of the current across a diode or ideal diode equation william shockley argues that the total voltage drop across the diode or pn junction can be divided into three parts.
Derivation of diode current equation also called shockley diode equation. Similar to the resistance value r of a resistor or the capacitance c of a capacitor these three parameters specify the performance of a junction diode. I s saturation or scale current.

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