✔ Dram Mim Capacitor

Dram Mim Capacitor

- March 15, 2018

The cells are arranged in a rectangular grid like array. Mim capacitors in these dram applications utilize insulating materials having a dielectric constant or k value significantly higher than that of sio 2 k39.

Ta Doped Sno2 As A Reduction Resistant Oxide Electrode For

Dielectric Enhancement Of Atomic Layer Deposited Al2o3 Zro2

Cross Section Of A Stacked Mim Capacitor In A Capacitor

Structure of a mim capacitor metal insulator metal has a dielectric plate over it built to reduce damage.

Dram mim capacitor. Even in trench type cell al2o3 has been applied to capacitor dielectric 15. In order to assure sufficient data retention time a charge storage capacitance of 25 35ffcell and cell leakage currents 1facell are required and have to be maintained over the coming technology generations. Embedded dram cell with mim capacitors access transistors and contacts.

The recent progress in the metal insulator metal mim capacitor technology is reviewed in terms of the materials and processes mostly for dynamic random access memory dram applications. For many decades dynamic random access memory dram capacitors have been successfully scaled down to smaller nodes but technology barriers which would limit further scaling became visible 1. For dram capacitors the goal is to utilize dielectric materials with k values greater than about 40.

Insulative substrate forms a cavity like a back end of line dielectric layer first metal layer and conformally layer being deposited on its surface. This document explores the uses of metal insulator metal mim capacitors in various electronic applications including radio frequency rf circuits analog integrated circuits ics microprocessor units mpus and dynamic random access memory dram cells. To fill a remaining portion of the cavity second layer is conformally deposited.

Planar mim metalinsulatormetal capacitors are one of the key building blocks in advanced cmos platforms intended for the production of analogmixed signalrfcmos and power management products. Similarly the use of si 3 n 4 as a capacitor dielectric beyond the 100 nm node is limited by its high thermal budget around 650 0c. The dram itself is based on a one transistor one capacitor 1t1c cell structure.

Such materials are generally classified as high k materials. In simple terms a voltage is applied to the transistor in the dram cell. This recent shift toward high k dielectric seems inevitable regardless of cell structure.

Mim capacitor cells with ta2o5 al2o3 and hfo2 have been reported for embedded dram products 12 14. Based stacks are challenging due to the exponentially enhanced leakage current for thinner dielectric layers. Temperature process mim capacitor cell is suited for embedded dram application.

The voltage is then given a data value. Dram capacitor scaling has played a central role in this effort.